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HAL300 differential hall effect sensor ic edition july 15, 1998 6251-345-1ds micr onas micronas
HAL300 2 micronas differential hall effect sensor ic in cmos technology introduction the hal 300 is a differential hall switch produced in cmos technology. the sensor includes 2 temperature- compensated hall plates (2.05 mm apart) with active off- set compensation, a differential amplifier with a schmitt trigger, and an open-drain output transistor (see fig. 2). the hal 300 is a differential sensor which responds to spatial differences of the magnetic field. the hall volt- ages at the two hall plates, s 1 and s 2 , are amplified with a differential amplifier. the differential signal is compared with the actual switching level of the internal schmitt trigger. accordingly, the output transistor is switched on or off. the sensor has a bipolar switching behavior and re- quires positive and negative values of ? b = b s1 ? b s2 for correct operation. the hal 300 is an ideal sensor for applications with a ro- tating multi-pole-ring in front of the branded side of the package (see fig. 4 and fig. 5), such as ignition timing, anti-lock brake systems, and revolution counting. for applications in which a magnet is mounted on the back side of the package (back-biased applications), the hal320 is recommended. the active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture. the sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 4.5 v to 24 v in the ambient temperature range from ?40 c up to 150 c. the hal 300 is available in a smd-package (sot-89a) and in a leaded version (to-92ua). features: ? distance between hall plates: 2.05 mm ? operates from 4.5 v to 24 v supply voltage ? switching offset compensation at 62 khz ? overvoltage protection ? reverse-voltage protection at v dd -pin ? short-circuit protected open-drain output by thermal shutdown ? operates with magnetic fields from dc to 10 khz ? output turns low with magnetic south pole on branded side of package and with a higher magnetic flux densi- ty in sensitive area s1 as in s2 ? on-chip temperature compensation circuitry mini- mizes shifts of the magnetic parameters over temper- ature and supply voltage range ? the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hystere- sis ? emc corresponding to din 40839 marking code type temperature range a e c HAL300so, HAL300ua 300a 300e 300c operating junction temperature range (t j ) a: t j = ?40 c to +170 c e: t j = ?40 c to +100 c c: t j = 0 c to +100 c the relationship between ambient temperature (t a ) and junction temperature (t j ) is explained on page 11. hall sensor package codes type: 300 halxxxpa-t temperature range: a, e, or c package: so for sot-89a, ua for to-92ua type: 300 package: to-92ua temperature range: t j = ?40 c to +100 c example: HAL300ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: ?ordering codes for hall sensors?.
HAL300 3 micronas solderability ? package sot-89a: according to iec68-2-58 ? package to-92ua: according to iec68-2-20 out gnd 3 2 1 v dd fig. 1: pin configuration functional description this hall effect sensor is a monolithic integrated circuit with 2 hall plates 2.05 mm apart that switches in response to differential magnetic fields. if magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased hall plates force hall voltages proportional to these fields. the difference of the hall voltages is compared with the actual thresh- old level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built- in hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. magnetic offset caused by mechanical stress at the hall plates is compensated for by using the ? switching offset compensation technique ? : an internal oscillator pro- vides a two phase clock (see fig. 3). the difference of the hall voltages is sampled at the end of the first phase. at the end of the second phase, both sampled differen- tial hall voltages are averaged and compared with the actual switching point. subsequently, the open drain output switches to the appropriate state. the amount of time that elapses from crossing the magnetic switch lev- el to the actual switching of the output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for values ranging from 0 v to ? 15 v. HAL300 temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock gnd 2 fig. 2: HAL300 block diagram short circuit & overvoltage protection reverse voltage & overvoltage protection hall plate s1 hall plate s2 t v ol v out 1/f osc = 16 s fig. 3: timing diagram v oh b b on f osc t t t f t i dd t
HAL300 4 micronas outline dimensions fig. 4: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 4 0.2 1.53 0.05 0.125 spgs7001-6-b3/1e top view y 123 2 0.7 sensitive area s 1 sensitive area s 2 x 1 x 2 branded side dimensions of sensitive areas 0.08 mm x 0.17 mm positions of sensitive areas sot-89a to-92ua x 1 = ? 1.025 mm 0.2 mm x 2 = 1.025 mm 0.2 mm x 2 ? x 1 = 2.05 mm 0.01 mm y = 0.98 mm 0.2 mm y = 1.0 mm 0.2 mm x 1 and x 2 are referenced to the center of the package 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 3.1 1.27 1.27 2.54 123 0.5 0.42 fig. 5: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 1.5 0.05 4.06 0.1 2.03 3.05 0.1 0.48 sensitive area s 1 sensitive area s 2 spgs7002-6-b/1e x 1 x 2
HAL300 5 micronas absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v ? v p test voltage for supply 1 ? 24 2) ? v ? i dd reverse supply current 1 ? 50 1) ma i ddz supply current through protection device 1 ? 200 3) 200 3) ma v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 30 ma i omax peak output on current 3 ? 250 3) ma i oz output current through protection device 3 ? 200 3) 200 3) ma t s storage temperature range ? 65 150 c t j junction temperature range ? 40 ? 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 ? series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t < 1000h stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4.5 24 v i o continuous output on current 3 ? 20 ma v o output voltage 3 ? 24 v r v series resistor 1 ? 270 ?
HAL300 6 micronas electrical characteristics at t j = ? 40 c to +170 c , v dd = 4.5 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 4.0 5.5 6.8 ma t j = 25 c i dd supply current over temperature range 1 2.5 5 7.5 ma v ddz overvoltage protection at supply 1 ? 28.5 32.5 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 ? 28 32.5 v i ol = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 ? 180 250 mv v dd = 12 v, i o = 20 ma, t j = 25 c v ol output voltage over temperature range 3 ? 180 400 mv i o = 20 ma i oh output leakage current 3 ? 0.06 1 a v oh = 4.5 v... 24 v, b < b off , t j = 25 c i oh output leakage current over temperature range 3 ? 0.06 10 a v oh = 4.5 v... 24 v, b < b off , t j 150 c f osc internal oscillator chopper frequency ? 42 62 75 khz t j = 25 c f osc internal oscillator chopper fre- quency over temperature range ? 36 62 78 khz t en(o) enable time of output after setting of v dd 3 ? 35 ? s v dd = 12 v, b > b on + 2mt or b < b off ? 2mt t r output rise time 3 ? 80 400 ns v dd = 12 v, rl = 820 ? , cl = 20 pf t f output fall time 3 ? 45 400 ns v dd = 12 v, rl = 820 ? , cl = 20 pf r thjsb case sot-89a thermal resistance junction to substrate backside ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 7 r thjs case to-92ua thermal resistance junction to soldering point ? 150 200 k/w
HAL300 7 micronas magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 24 v typical characteristics for v dd = 12 v magnetic flux density values of switching points (condition: ? 10 mt < b 0 < 10 mt) positive flux density values refer to the magnetic south pole at the branded side ot the package. ? b = b s1 ? b s2 parameter ?40 on point ? b on ? b > ? b on 0.2 1.2 2.2 0 1.2 2.2 ? 0.5 1.0 2.5 ? 2.0 0.5 3.0 mt off point ? b off ? b < ? b off ? 2.2 ? 1.0 ? 0.2 ? 2.2 ? 1.0 0 ? 2.5 ? 1.1 0.5 ? 3.0 ? 1.2 2.0 mt hysteresis ? b hys = ? b on ? ? b off 1.2 2.2 3.0 1.2 2.2 3.0 1.0 2.1 3.0 0.8 1.7 3.0 mt offset ? b offset = (? b on + ? b off )/2 ? 1.1 0.1 1.1 ? 1.1 0.1 1.1 ? 1.5 ? 0.1 1.5 ? 2.5 ? 0.5 2.5 mt b off min b on max b hys output voltage fig. 6: definition of switching points and hysteresis 0 b off b on ? b = b s1 ? b s2 v oh v ol fig. 7: recommended pad size sot-89a dimensions in mm 5.0 2.0 2.0 1.0
HAL300 8 micronas ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 mt v dd v b on b off t a = 25 c t a = ? 40 c t a = 150 c b on b off fig. 8: typical magnetic switch points versus supply voltage ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3 3.5 4.0 4.5 5.0 5.5 6.0 mt v dd v b on b off b on b off t a = 25 c t a = ? 40 c t a = 150 c fig. 9: typical magnetic switch points versus supply voltage ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 0 50 100 150 200 mt t a c b on b off v dd = 4.5 v b on b off v dd = 12 v v dd = 24 v fig. 10: typical magnetic switch points versus ambient temperature ? 15 ? 10 ? 5 0 5 10 15 20 ? 15 ? 10 ? 5 0 5 1015202530 v ma v dd i dd 25 t a = 25 c t a = ? 40 c t a = 150 c fig. 11: typical supply current versus supply voltage
HAL300 9 micronas 0 1 2 3 4 5 6 7 12345678 v ma v dd i dd t a = ? 40 c t a = 25 c t a = 150 c fig. 12: typical supply current versus supply voltage 0 1 2 3 4 5 6 7 ? 50 0 50 100 150 200 c ma t a i dd v dd = 24 v v dd = 12 v v dd = 4.5 v fig. 13: typical supply current versus ambient temperature 0 100 200 300 400 500 0 5 10 15 20 25 30 v mv v dd v ol t a = 150 c t a = 25 c t a = ? 40 c fig. 14: typical output low voltage versus supply voltage i o = 20 ma 0 100 200 300 400 500 ? 50 0 50 100 150 200 c mv t a v ol v dd = 24 v v dd = 4.5 v fig. 15: typical output low voltage versus ambient temperature i o = 20 ma
HAL300 10 micronas 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v khz v dd f osc t a = 25 c fig. 16: typical internal chopper frequency versus supply voltage 0 10 20 30 40 50 60 70 3 3.5 4.0 4.5 5.0 5.5 6.0 v khz v dd f osc t a = 25 c fig. 17: typical internal chopper frequency versus supply voltage 0 10 20 30 40 50 60 70 ? 50 0 50 100 150 200 khz t a f osc v dd = 12 v c fig. 18: typical internal chopper frequency versus ambient temperature ? 50 0 50 100 150 200 a t a i oh c 10 0 10 ? 1 10 ? 2 10 ? 3 10 ? 4 10 ? 5 10 1 10 2 v oh = 24 v v dd = 5 v fig. 19: typical output leakage current versus ambient temperature
HAL300 11 micronas 20 22 24 26 28 30 a v oh i oh v 10 0 10 ? 1 10 ? 2 10 ? 3 10 ? 4 10 ? 5 10 1 10 2 v dd = 5 v t a = 125 c t a = 75 c t a = 25 c fig. 20: typical output leakage current versus output voltage application notes mechanical stress can change the sensitivity of the hall plates and an offset of the magnetic switching points may result. external mechanical stress to the package can influence the magnetic parameters if the sensor is used under back-biased applications. this piezo sensi- tivity of the sensor ic cannot be completely compen- sated for by the switching offset compensation tech- nique. for back-biased applications, the hal 320 is recom- mended. in such cases, please contact our application department. they will provide assistance in avoiding applications which may induce stress to the ics. this stress may cause drifts of the magnetic parameters indi- cated in this data sheet. for electromagnetic immunity, it is recommended to ap- ply a 4.7 nf capacitor between v dd (pin 1) and ground (pin 2). for automotive applications, a 220 series re- sistor to pin 1 is recommended. because of the i dd peak at 4.1 v, the series resistor should not be greater than 270 ? . the series resistor and the capacitor should be placed as close as possible to the ic. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + ? t at static conditions, the following equations are valid: ? for sot-89a: ? t = i dd * v dd * r thjsb ? for to-92ua: ? t = i dd * v dd * r thja for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. test circuits for electromagnetic compatibility test pulses v emc corresponding to din 40839. out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 ? r l 1.2 k ? 20 pf fig. 21: test circuit 2: test procedure for class a out gnd 3 2 1v dd 4.7 nf v emc r v 220 ? r l 680 ? fig. 22: test circuit 1: test procedure for class c
HAL300 12 micronas interferences conducted along supply lines in 12 v onboard systems product standard: din 40839 part 1 pulse level u s in v test circuit pulses/ time function class remarks 1 iv ? 100 1 5000 c 5 s pulse interval 2 iv 100 1 5000 c 0.5 s pulse interval 3a iv ? 150 2 1 h a 3b iv 100 2 1h a 4 iv ? 7 2 5 a 5 iv 86.5 1 10 c 10 s pulse interval electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines product standard: din 40839 part 3 pulse level u s in v test circuit pulses/ time function class remarks 1 iv ? 30 2 500 a 5 s pulse interval 2 iv 30 2 500 a 0.5 s pulse interval 3a iv ? 60 2 10 min a 3b iv 40 2 10 min a radiated disturbances product standard: din 40839 part 4 test conditions ? temperature: room temperature (22 ... 25 c) ? supply voltage: 13 v ? lab equipment: tem cell 220 mhz (vw standard) with adaptor board 455 mm, device 80 mm over ground ? frequency range: 5 ... 220 mhz; 1 mhz steps ? test circuit 2 with r l = 1.2 k ? tested devices and results type field strength modulation result HAL300 > 200 v/m 1 khz 80 % output voltage stable on the level high or low 1) 1) low level 0.4 v, high level 90% of v dd
HAL300 13 micronas
HAL300 14 micronas
HAL300 15 micronas
HAL300 16 micronas data sheet history 1. final data sheet: ? hal 300 differential hall effect sensor ic ? , july 15, 1998, 6251-345-1ds. first release of the final data sheet. micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (07/1998) order no. 6251-345-1ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.
micronas page 1 of 1 subject: data sheet concerned: supplement: edition: data sheet supplement changes: C position tolerance of the sensitive area reduced C tolerances of the outline dimensions reduced C thickness of the leadframe changed to 0.15 mm (old 0.125 mm) C hal 300 now available in sot-89b C sot-89a will be discontinued in december 2000 position of sensitive area note: a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. position tolerances of the sensitive areas are defined in the package diagram. hal 300 hal 320 x 1 +x 2 (2.05 0.001) mm (2.25 0.001) mm x 1 = x 2 1.025 mm nominal 1.125 mm nominal y 0.95 mm nominal 0.95 mm nominal sensitive area s 1 4.55 min. 0.25 x 1 x 2 2.55 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 4 0.2 0.15 branded side spgs0022-5-b3/1e top view y 123 2 0.3 1.15 ? 0.2 sensitive area s 2 ? 0.2 improvement of sot-89b package hal 300, 6251-345-1ds, edition july 15, 1998 hal 320, 6251-439-1ds, edition july 15, 1998 no. 1/ 6251-532-1dss july 4, 2000 hal 300, hal 320

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